IXTA20N65X
MOSFET N-CH 650V 20A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTA20N65X is a 650V N-Channel MOSFET from the Ultra X series. This surface mount device, packaged in a TO-263AA, offers a continuous drain current of 20A at 25°C and a maximum power dissipation of 320W (Tc). Key electrical characteristics include a low Rds(on) of 210mOhm at 10A, 10V, and a gate charge (Qg) of 35 nC at 10V. Input capacitance (Ciss) is rated at 1390 pF at 25V. The device is designed for a drive voltage of 10V and has a Vgs(th) of 5.5V at 250µA, with a maximum Vgs rating of ±30V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power switching and high-voltage conversion.
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 25 V |
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