IXTA200N085T7
MOSFET N-CH 85V 200A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA200N085T7 is an N-Channel MOSFET from the TrenchMV™ series. This component features a Drain-to-Source Voltage (Vdss) of 85 V and a continuous Drain Current (Id) of 200 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 5 mOhm at 25 A and 10 V gate drive, it offers high efficiency for power switching applications. The device is rated for 480 W (Tc) power dissipation and utilizes a TO-263-7 surface mount package. Key parameters include a gate charge (Qg) of 152 nC at 10 V and input capacitance (Ciss) of 7600 pF at 25 V. This MOSFET is suitable for use in high-power conversion, electric vehicle systems, and industrial power supplies. It operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V |
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