IXTA200N075T7
MOSFET N-CH 75V 200A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTA200N075T7, a TrenchMV™ series N-Channel Power MOSFET, offers a 75V drain-to-source voltage and a continuous drain current of 200A at 25°C (Tc). This surface mount component, housed in a TO-263-7 (IXTA) package, features a low on-resistance of 5mOhm maximum at 25A and 10V Vgs. With a maximum power dissipation of 430W (Tc) and a gate charge of 160 nC @ 10V, this MOSFET is suitable for high-power switching applications. Operating temperature range is -55°C to 175°C (TJ). Key electrical parameters include an input capacitance (Ciss) of 6800 pF maximum at 25V Vds and a gate-source threshold voltage (Vgs(th)) of 4V maximum at 250µA. This device finds application in industrial power supplies, electric vehicle charging, and high-current DC-DC converters.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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