IXTA200N075T
MOSFET N-CH 75V 200A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTA200N075T is a high-performance N-Channel TrenchMV™ MOSFET designed for demanding power applications. This component features a 75V drain-to-source breakdown voltage and a continuous drain current rating of 200A at 25°C (Tc). The low on-resistance of 5mOhm at 25A and 10V gate drive voltage, coupled with a maximum power dissipation of 430W (Tc), makes it suitable for high-efficiency power conversion.
Key parameters include a gate charge of 160 nC at 10V and an input capacitance of 6800 pF at 25V. The IXTA200N075T is housed in a surface-mount TO-263-3, D2PAK package, ensuring robust thermal performance. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, electric vehicle systems, and telecommunications infrastructure where high current handling and low conduction losses are critical.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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