IXTA1N80
MOSFET N-CH 800V 750MA TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTA1N80, an N-Channel Power MOSFET, offers an 800V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 750mA at 25°C (Tc). This device features a maximum power dissipation of 40W (Tc) and a low on-resistance (Rds On) of 11 Ohms at 500mA and 10V (Vgs). The IXTA1N80 utilizes Metal Oxide technology and is packaged in a surface-mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB configuration. Key parameters include a gate charge (Qg) of 8.5 nC @ 10V and an input capacitance (Ciss) of 220 pF @ 25V. It is suitable for applications requiring high voltage switching and is commonly found in power supply units and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTQ250N075T
MOSFET N-CH 75V 250A TO3P
IXFB72N55Q2
MOSFET N-CH 550V 72A PLUS264
IXTY5N50P
MOSFET N-CH 500V 4.8A TO252
