IXTA1N100
MOSFET N-CH 1000V 1.5A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA1N100 is an N-Channel Power MOSFET designed for high-voltage applications. This surface-mount device features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 1.5A at 25°C. With a maximum power dissipation of 54W at 25°C (Tc), it offers a low on-resistance of 11 Ohms at 1A, 10V. The TO-263-3, D2PAK package facilitates efficient thermal management. Key parameters include gate charge (Qg) of 14.5 nC at 10V and input capacitance (Ciss) of 400 pF at 25V. This component is suitable for power supply units, lighting, and industrial motor control applications. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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