IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA180N085T7 from the TrenchMV™ series is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 85 V and a continuous drain current (Id) of 180 A at 25°C (Tc), with a maximum power dissipation of 430 W (Tc). The low on-resistance (Rds On), specified at a maximum of 5.5 mOhm at 25 A and 10 V, ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 170 nC at 10 V and an input capacitance (Ciss) of 7500 pF at 25 V. The device utilizes a surface mount TO-263-7 (IXTA) package, suitable for demanding thermal management. It operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial power supplies, electric vehicle systems, and solar inverters.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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