IXTA180N085T
MOSFET N-CH 85V 180A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA180N085T is an N-Channel MOSFET from the TrenchMV™ series, featuring a Drain-Source Voltage (Vdss) of 85V. This component is rated for a continuous Drain Current (Id) of 180A at 25°C (Tc) and offers a maximum Power Dissipation (Pd) of 430W (Tc). The IXTA180N085T exhibits a low on-resistance of 5.5mOhm at 25A and 10V (Vgs). Key electrical characteristics include a Gate Charge (Qg) of 170 nC at 10V and an Input Capacitance (Ciss) of 7500 pF at 25V. Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. This component operates across a temperature range of -55°C to 175°C (TJ). Typical applications for this device include power supply units, motor control, and electric vehicle systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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