IXTA160N085T
MOSFET N-CH 85V 160A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA160N085T is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-to-Source Voltage (Vdss) of 85V and a continuous drain current (Id) of 160A at 25°C, with a maximum power dissipation of 360W (Tc). The low on-resistance (Rds On) of 6mOhm is achieved at 50A and a gate-drive voltage of 10V, ensuring minimal conduction losses.
Key parameters include a gate charge (Qg) of 164 nC at 10V and input capacitance (Ciss) of 6400 pF at 25V, critical for high-frequency switching performance. The IXTA160N085T is housed in a TO-263-3, D2PAK surface-mount package, facilitating streamlined PCB assembly. With an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding environments found in industrial power supplies, electric vehicle charging, and renewable energy systems. The maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 25 V |
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