IXTA160N04T2
MOSFET N-CH 40V 160A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA160N04T2 is a TrenchT2™ series N-Channel MOSFET designed for high-current applications. This component features a 40V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 160A at 25°C. With a low on-resistance (Rds On) of 5mOhm at 50A and 10V Vgs, it offers efficient power handling, dissipating up to 250W. The MOSFET utilizes a TO-263-3, D2PAK surface-mount package, making it suitable for automated assembly. Key parameters include a gate charge (Qg) of 79 nC and input capacitance (Ciss) of 4640 pF at specified voltages. This device is utilized in power control, automotive, and industrial applications where robust performance and thermal management are critical. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4640 pF @ 25 V |
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