IXTA15N50L2
MOSFET N-CH 500V 15A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA15N50L2 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component from the Linear L2™ series features a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C. With a maximum power dissipation of 300W (Tc), it offers robust performance in demanding environments. The surface mount TO-263-3, D2PAK package facilitates integration into compact board designs. Key electrical characteristics include a low on-resistance (Rds On) of 480mOhm at 7.5A and 10V, and a gate charge (Qg) of 123 nC at 10V. This device is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: Linear L2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4080 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTQ60N20L2
MOSFET N-CH 200V 60A TO3P
IXTT110N10L2
MOSFET N-CH 100V 110A TO268
IXTT60N20L2
MOSFET N-CH 200V 60A TO268
