IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA152N085T7 is an N-Channel TrenchMV™ MOSFET designed for high-efficiency power applications. This component boasts a Drain-Source Voltage (Vdss) of 85V and a continuous Drain Current (Id) of 152A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). Featuring a low on-resistance of 7mOhm at 25A and 10V, this MOSFET minimizes conduction losses. The TO-263-7 (IXTA) surface mount package facilitates integration into compact designs. Key parameters include a Gate Charge (Qg) of 114 nC at 10V and Input Capacitance (Ciss) of 5500 pF at 25V. This device is suitable for applications across industrial power supplies, automotive systems, and renewable energy inverters. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 152A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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