IXTA130N065T2
MOSFET N-CH 65V 130A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTA130N065T2 is an N-Channel Power MOSFET from the TrenchT2™ series. This component features a 65V drain-source voltage rating and a continuous drain current capability of 130A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The device exhibits a low on-resistance of 6.6mOhm maximum at 50A and 10V Vgs. Key parameters include a gate charge of 79 nC at 10V and input capacitance of 4800 pF at 25V. Engineered for efficient switching, this MOSFET is suitable for high-current applications in power supplies, motor drives, and industrial automation. It is offered in a TO-263-3, D2PAK surface-mount package. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 65 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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