IXTA110N12T2
MOSFET N-CH 120V 110A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTA110N12T2 is an N-channel TrenchT2™ MOSFET designed for high-power applications. This device features a 120 V drain-source voltage (Vdss) and a continuous drain current (Id) of 110 A at 25°C. The IXTA110N12T2 offers a low on-resistance of 14 mOhm maximum at 55 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 517 W at 25°C (Tc), it is suitable for demanding thermal environments. The gate charge (Qg) is 120 nC maximum at 10 V, and input capacitance (Ciss) is 6570 pF maximum at 25 V. This MOSFET is housed in a TO-263-3, D2PAK surface-mount package, facilitating efficient board integration. Operating temperature range is from -55°C to 175°C (TJ). Its robust design makes it applicable in power supplies, electric vehicle systems, and industrial motor control.
Additional Information
Series: TrenchT2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 517W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6570 pF @ 25 V |
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