IXTA110N055T
MOSFET N-CH 55V 110A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTA110N055T is an N-Channel Power MOSFET from the TrenchMV™ series, featuring a Drain-to-Source Voltage (Vdss) of 55V. This component is engineered for high current applications, offering a Continuous Drain Current (Id) of 110A at 25°C (Tc) and a maximum power dissipation of 230W (Tc). The IXTA110N055T boasts a low on-resistance (Rds On) of 7mOhm at 25A and 10V gate drive, facilitated by its advanced trench technology. Key parameters include a Gate Charge (Qg) of 67 nC (Max) at 10V and Input Capacitance (Ciss) of 3080 pF (Max) at 25V. The device is housed in a TO-263-3, D2PAK (TO-263AB) surface-mount package, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C. This MOSFET finds application in power supply units, motor control, and automotive systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3080 pF @ 25 V |
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