IXTA110N055P
MOSFET N-CH 55V 110A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTA110N055P is an N-Channel Power MOSFET from the Polar series, designed for high-performance switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 110A at 25°C. The specified Rds(on) is a maximum of 13.5mOhm at 10V Vgs and 500mA Id. With a maximum power dissipation of 390W at the case temperature, this MOSFET is suitable for demanding power management tasks. Key electrical parameters include an input capacitance (Ciss) of 2210pF at 25V and a gate charge (Qg) of 76nC at 10V. The device operates over a junction temperature range of -55°C to 175°C. Packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB (TO-263AA) for surface mounting, this MOSFET finds application in power supplies, motor control, and automotive electronics.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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