IXTA02N450HV
MOSFET N-CH 4500V 200MA TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA02N450HV is an N-Channel Power MOSFET designed for high voltage applications. Featuring a Drain-Source Voltage (Vdss) of 4500V, this component is suitable for demanding power conversion circuits. It offers a Continuous Drain Current (Id) of 200mA at 25°C and a maximum power dissipation of 113W (Tc). The IXTA02N450HV has a typical gate charge of 10.4 nC at 10V and an input capacitance (Ciss) of 256 pF at 25V. The On-Resistance (Rds On) is specified at 750 Ohms maximum at 10mA and 10V. This device is housed in a TO-263-3, D2PAK package, enabling surface mount assembly. Operating temperature ranges from -55°C to 150°C. Applications for this MOSFET include high voltage power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Rds On (Max) @ Id, Vgs | 750Ohm @ 10mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 4500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 256 pF @ 25 V |
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