IXTA02N250
MOSFET N-CH 2500V 200MA TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS N-Channel MOSFET IXTA02N250 offers a 2500V drain-source voltage and a continuous drain current of 200mA at 25°C. This device features a low gate charge of 7.4 nC at 10V and an input capacitance of 116 pF at 25V. The IXTA02N250 has a maximum Rds On of 450 Ohms at 50mA and 10V, with a gate threshold voltage (Vgs(th)) of 4.5V at 250µA. Designed for surface mounting, it is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package. The component provides a maximum power dissipation of 83W at 25°C and operates within an ambient temperature range of -55°C to 150°C. This MOSFET is suitable for applications requiring high voltage switching, including industrial power supplies and high-voltage DC-DC converters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Rds On (Max) @ Id, Vgs | 450Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 2500 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 116 pF @ 25 V |