IXT-1-1N100S1-TR
MOSFET N-CH 1000V 1.5A 8-SOICManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXT-1-1N100S1-TR is an N-Channel MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 1.5A at 25°C (Tc). The device utilizes Metal Oxide technology and is supplied in a Tape & Reel package. This MOSFET is suitable for use in power switching and high-voltage power supply applications within industrial and power electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | - |
| Drain to Source Voltage (Vdss) | 1000 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
