IXKR25N80C
MOSFET N-CH 800V 25A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKR25N80C is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This CoolMOS™ series component features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 25 A at 25°C (Tc). The Rds On (Max) is specified at 150 mOhm at 18 A and 10 V gate drive. Key parameters include a typical gate charge (Qg) of 355 nC at 10 V and a threshold voltage (Vgs(th)) of 4 V at 2 mA. The device is housed in an ISOPLUS247™ package, suitable for through-hole mounting. Operating temperature range is -40°C to 150°C (TJ). This component is utilized in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 355 nC @ 10 V |
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