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IXKP20N60C5

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IXKP20N60C5

MOSFET N-CH 600V 20A TO220AB

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXKP20N60C5 is a CoolMOS™ N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 20A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 200mOhm at 10A and 10V gate drive, it offers excellent conduction losses. Key parameters include a typical Gate Charge (Qg) of 45 nC at 10V and an Input Capacitance (Ciss) of 1520 pF at 100V. The device is packaged in a TO-220-3 through-hole configuration, suitable for demanding power conversion circuits in industrial and renewable energy sectors. It operates within a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id3.5V @ 1.1mA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1520 pF @ 100 V

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