IXKP20N60C5
MOSFET N-CH 600V 20A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKP20N60C5 is a CoolMOS™ N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 20A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 200mOhm at 10A and 10V gate drive, it offers excellent conduction losses. Key parameters include a typical Gate Charge (Qg) of 45 nC at 10V and an Input Capacitance (Ciss) of 1520 pF at 100V. The device is packaged in a TO-220-3 through-hole configuration, suitable for demanding power conversion circuits in industrial and renewable energy sectors. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 1.1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 100 V |
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