IXKP13N60C5M
MOSFET N-CH 600V 6.5A TO220ABFPManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS CoolMOS™ IXKP13N60C5M is an N-Channel power MOSFET designed for high-voltage switching applications. This device features a maximum drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 6.5 A at 25°C. The Rds On is specified at a maximum of 300 mOhm at 6.6 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 30 nC at 10 V and an input capacitance (Ciss) of 1100 pF at 100 V. Operating over a temperature range of -55°C to 150°C, this MOSFET is housed in a TO-220ABFP package suitable for through-hole mounting. It finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | TO-220ABFP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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