IXKP10N60C5M
MOSFET N-CH 600V 5.4A TO220ABFPManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXKP10N60C5M is a CoolMOS™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 5.4 A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 385 mOhm at 5.2 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 22 nC at 10 V and an Input Capacitance (Ciss) of 790 pF at 100 V. The IXKP10N60C5M is packaged in a TO-220ABFP (TO-220-3 Full Pack) and is designed for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 340µA |
| Supplier Device Package | TO-220ABFP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 100 V |
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