IXKN75N60C
MOSFET N-CH 600V 75A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKN75N60C is a CoolMOS™ N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 75A at 25°C (Tc). With a maximum power dissipation of 560W (Tc), it is suitable for demanding power conversion tasks. The MOSFET exhibits a low on-resistance (Rds On) of 36mOhm at 50A and 10V gate drive. Its gate charge (Qg) is 500 nC maximum at 10V. The IXKN75N60C utilizes a SOT-227B (miniBLOC) package for chassis mounting, facilitating efficient thermal management. This component is commonly employed in power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 72 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 5mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 500 nC @ 10 V |
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