IXKN45N80C
MOSFET N-CH 800V 44A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKN45N80C is an 800V N-Channel CoolMOS™ power MOSFET. This device features a continuous drain current of 44A at 25°C (Tc) and a maximum power dissipation of 380W (Tc). It offers a low on-resistance of 74mOhm at 44A and 10V (Vgs). The IXKN45N80C is housed in a SOT-227B (miniBLOC) package designed for chassis mounting. Key parameters include a gate charge (Qg) of 360 nC at 10V (Vgs) and a threshold voltage (Vgs(th)) of 3.9V at 4mA. This component is suitable for high-voltage switching applications in power supplies, industrial motor control, and renewable energy systems. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 72 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
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