IXKN40N60C
MOSFET N-CH 600V 40A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKN40N60C is a 600 V N-Channel Power MOSFET from the CoolMOS™ series, packaged in a SOT-227B chassis mount configuration. This device offers a continuous drain current of 40A at 25°C (Tc) and a maximum power dissipation of 290W (Tc). Key electrical characteristics include a low Rds On of 70mOhm at 500mA and 10V, and a gate charge of 250 nC at 10V. The MOSFET features a threshold voltage (Vgs(th)) of 3.9V at 2.5mA and a maximum gate-source voltage (Vgs) of ±20V. Designed for demanding applications, this component is suitable for use in power supplies, motor control, and industrial power conversion systems, operating across a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 72 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 2.5mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
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