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IXKN40N60C

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IXKN40N60C

MOSFET N-CH 600V 40A SOT-227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXKN40N60C is a 600 V N-Channel Power MOSFET from the CoolMOS™ series, packaged in a SOT-227B chassis mount configuration. This device offers a continuous drain current of 40A at 25°C (Tc) and a maximum power dissipation of 290W (Tc). Key electrical characteristics include a low Rds On of 70mOhm at 500mA and 10V, and a gate charge of 250 nC at 10V. The MOSFET features a threshold voltage (Vgs(th)) of 3.9V at 2.5mA and a maximum gate-source voltage (Vgs) of ±20V. Designed for demanding applications, this component is suitable for use in power supplies, motor control, and industrial power conversion systems, operating across a temperature range of -40°C to 150°C (TJ).

Additional Information

Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 72 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs70mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)290W (Tc)
Vgs(th) (Max) @ Id3.9V @ 2.5mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V

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