IXKF40N60SCD1
MOSFET N-CH 600V 41A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS CoolMOS™ N-Channel Power MOSFET, part number IXKF40N60SCD1, offers a 600V breakdown voltage and a continuous drain current rating of 41A (Tc @ 25°C). This through-hole device features a low Rds(on) of 70mOhm at 25A and 10V gate drive, with a typical gate charge of 250nC @ 10V. The ISOPLUS i4-PAC™ package provides robust thermal performance for demanding applications. Optimized for high-efficiency power conversion, this MOSFET is suitable for use in industrial automation, renewable energy systems, and power supplies. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
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