IXKC40N60C
MOSFET N-CH 600V 28A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXKC40N60C is a 600V N-Channel Power MOSFET from the CoolMOS™ series. This device features a continuous drain current capability of 28A at 25°C (Tc) and a low on-resistance of 95mOhm at 28A and 10V. With a gate charge (Qg) of 230 nC at 10V and an input capacitance (Ciss) of 4800 pF at 25V, it is designed for efficient switching applications. The MOSFET is housed in an ISOPLUS220™ package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in power supply, motor control, and industrial power applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.9V @ 2mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
