IXKC23N60C5
MOSFET N-CH 600V 23A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKC23N60C5 is a CoolMOS™ N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 23 A at 25°C (Tc). With a low on-resistance (Rds On) of 100 mOhm at 18 A and 10 V, it minimizes conduction losses. The device exhibits a typical gate charge (Qg) of 80 nC at 10 V and an input capacitance (Ciss) of 2800 pF at 100 V. The IXKC23N60C5 is housed in an ISOPLUS220™ package, facilitating through-hole mounting. Its operating temperature range is -55°C to 150°C. This component is commonly utilized in power supplies, solar inverters, and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.9V @ 1.2mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 100 V |
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