IXKC19N60C5
MOSFET N-CH 600V 19A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKC19N60C5 is a CoolMOS™ N-Channel Power MOSFET designed for high-efficiency applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 19A at 25°C (Tc). With a low on-resistance (Rds On) of 125mOhm at 16A and 10V, it minimizes conduction losses. The ISOPLUS220™ package offers excellent thermal performance and ease of mounting via its through-hole design. Key parameters include a gate charge (Qg) of 70 nC at 10V and input capacitance (Ciss) of 2500 pF at 100V, facilitating efficient switching. This MOSFET is suitable for power factor correction, switch-mode power supplies, and industrial motor control applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 1.1mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
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