IXKC15N60C5
MOSFET N-CH 600V 15A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKC15N60C5 is a CoolMOS™ N-Channel power MOSFET designed for high-performance applications. This through-hole component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C (Tc). With a maximum Rds(on) of 165mOhm at 12A and 10V, it offers efficient switching characteristics. Key parameters include a gate charge (Qg) of 52 nC at 10V and an input capacitance (Ciss) of 2000 pF at 100V. The ISOPLUS220™ package enhances thermal management. This device is suitable for use in power supply units, industrial motor drives, and renewable energy systems. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 900µA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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