IXKC13N80C
MOSFET N-CH 800V 13A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXKC13N80C is an N-Channel Power MOSFET featuring 800V drain-source voltage and a continuous drain current capability of 13A at 25°C (Tc). This CoolMOS™ series device utilizes a Metal Oxide technology and is housed in an ISOPLUS220™ package for through-hole mounting. Key electrical specifications include a maximum on-resistance (Rds On) of 290mOhm at 9A and 10V gate drive, with a typical gate charge (Qg) of 90 nC at 10V. Input capacitance (Ciss) is rated at 2300 pF maximum at 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) of ±20V. Applications include high-voltage power conversion and switching power supplies.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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