IXFZ520N075T2
MOSFET N-CH 75V 465A DE475Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, TrenchT2™ N-Channel Power MOSFET, part number IXFZ520N075T2, offers a 75V drain-to-source voltage and a continuous drain current of 465A at 25°C (Tc). This device features a low on-resistance of 1.3mOhm maximum at 100A, 10V, and a maximum power dissipation of 600W (Tc), enabling efficient power handling. The IXFZ520N075T2 is designed with a 10V gate drive voltage and a gate charge of 545nC at 10V. Its input capacitance (Ciss) is 41000pF at 25V. Packaged in a surface-mount DE475 with 6-SMD, flat leads, this MOSFET operates across a temperature range of -55°C to 175°C (TJ). It is suitable for applications in high-power switching, electric vehicle powertrains, and industrial motor control.
Additional Information
Series: HiPerFET™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 465A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | DE475 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 545 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 41000 pF @ 25 V |