IXFZ140N25T
MOSFET N-CH 250V 100A DE475Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFZ140N25T is a high-performance N-channel Power MOSFET from the HiPerFET™, Trench series, designed for demanding power applications. This device features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). With a low on-resistance (Rds On) of 17mOhm at 60A and 10V, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 445W (Tc) and is housed in a DE475 surface mount package. Key parameters include a gate charge (Qg) of 255 nC at 10V and input capacitance (Ciss) of 19000 pF at 25V. It operates across a temperature range of -55°C to 150°C. This component is suitable for power supplies, motor control, and industrial applications.
Additional Information
Series: HiPerFET™, TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 445W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | DE475 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |
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