IXFY8N65X2
MOSFET N-CH 650V 8A TO252AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFY8N65X2 is a HiPerFET™, Ultra X2 series N-Channel Power MOSFET designed for demanding applications. This component offers a 650 V drain-source voltage (Vdss) and a continuous drain current (Id) of 8 A at 25°C. Featuring a low on-resistance of 450 mOhm maximum at 4 A and 10 V, it achieves efficient power handling with a maximum power dissipation of 150 W (Tc). The device utilizes Metal Oxide technology and is housed in a TO-252AA surface mount package, ideal for high-density board designs. Key parameters include a gate charge (Qg) of 11 nC maximum at 10 V and an input capacitance (Ciss) of 790 pF maximum at 25 V. This MOSFET is suitable for use in power supply, lighting, and industrial applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: HiPerFET™, Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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