IXFY5N50P3
MOSFET N-CH 500V 5A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXFY5N50P3, a HiPerFET™ and Polar3™ series N-Channel power MOSFET, offers a 500 V drain-to-source voltage and 5 A continuous drain current at 25°C (Tc). This surface mount device, packaged in a TO-252AA (DPAK) configuration, features a maximum on-resistance of 1.65 O at 2.5 A and 10 V gate drive. With a gate charge of 6.9 nC and input capacitance of 370 pF, it is suitable for high-frequency switching applications. The device supports a maximum junction temperature of 150°C and has a power dissipation capability of 114 W (Tc). This component finds application in power supply units, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.65Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFQ34N50P3
MOSFET N-CH 500V 34A TO3P
IXFQ20N50P3
MOSFET N-CH 500V 20A TO3P
IXFP16N50P3
MOSFET N-CH 500V 16A TO220AB
