IXFY4N85X
MOSFET N-CH 850V 3.5A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFY4N85X from the HiPerFET™, Ultra X series is an N-channel MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 850 V and a continuous drain current (Id) of 3.5 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.5 Ohms at 2 A and 10 Vgs, it offers efficient switching. The device is packaged in a TO-252AA (DPAK) surface-mount package, supporting a maximum power dissipation of 150 W at 25°C (Tc). Key parameters include a gate charge (Qg) of 7 nC at 10 V and input capacitance (Ciss) of 247 pF at 25 V. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 850 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 247 pF @ 25 V |
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