IXFY4N60P3
MOSFET N-CH 600V 4A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFY4N60P3 is a 600V N-Channel Power MOSFET from the HiPerFET™, Polar3™ series. This device features a continuous drain current (Id) of 4A at 25°C and a maximum power dissipation of 114W at the same temperature. The Rds(On) is specified at 2.2 Ohm maximum at 2A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 6.9 nC maximum at 10V and input capacitance (Ciss) of 365 pF maximum at 25V. The device is housed in a TO-252AA (DPAK) surface mount package. It is designed for applications requiring high voltage and efficient switching, commonly found in power supply units, uninterruptible power supplies (UPS), and industrial motor control. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V |
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