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IXFX94N50P2

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IXFX94N50P2

MOSFET N-CH 500V 94A PLUS247-3

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXFX94N50P2 is a HiPerFET™, PolarP2™ series N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 94A at 25°C (Tc), with a maximum power dissipation of 1300W (Tc). The device offers a low on-resistance (Rds On) of 55mOhm at 500mA and 10V (Vgs), facilitated by a 10V gate drive voltage. Key parameters include a gate charge (Qg) of 220 nC @ 10V and input capacitance (Ciss) of 13700 pF @ 25V. The IXFX94N50P2 is housed in a through-hole PLUS247™-3 package, suitable for demanding thermal management. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, motor control, and industrial automation.

Additional Information

Series: HiPerFET™, PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C94A (Tc)
Rds On (Max) @ Id, Vgs55mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)1300W (Tc)
Vgs(th) (Max) @ Id5V @ 8mA
Supplier Device PackagePLUS247™-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13700 pF @ 25 V

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