IXFX90N60X
MOSFET N-CH 600V 90A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX90N60X is a HiPerFET™, Ultra X series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 90A at 25°C, with a maximum power dissipation of 1100W (Tc). The Rds On is rated at a maximum of 38mOhm at 45A and 10V gate drive. Key parameters include an input capacitance (Ciss) of 8500 pF and a gate charge (Qg) of 210 nC, both specified at their respective test conditions. The device utilizes a TO-247-3 Variant package, also known as PLUS247™-3, for through-hole mounting. Its operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for demanding applications in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1100W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 25 V |
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