IXFX88N20Q
MOSFET N-CH 200V 88A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Q Class IXFX88N20Q is a 200V N-Channel Power MOSFET in a PLUS247™-3 package. This device offers a continuous drain current of 88A at 25°C and a maximum power dissipation of 500W (Tc). Key electrical characteristics include a low on-resistance of 30mOhm at 44A and 10V, with a gate charge (Qg) of 146 nC at 10V. The input capacitance (Ciss) is rated at 4150 pF at 25V. Designed for high-efficiency switching applications, this MOSFET is suitable for use in industrial power supplies, motor control, and renewable energy systems. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±30V.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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