IXFX80N50P
MOSFET N-CH 500V 80A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX80N50P is a HiPerFET™ Polar Series N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a 500V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C case temperature, with a maximum power dissipation of 1040W. The device exhibits a low on-resistance of 65mOhm maximum at 40A and 10V gate-source voltage. Key parameters include a gate charge of 197 nC at 10V and an input capacitance of 12700 pF at 25V. The IXFX80N50P is packaged in a TO-247-3 variant (PLUS247™-3) and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power supplies, motor control, and industrial power conversion systems.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 197 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12700 pF @ 25 V |
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