IXFX64N50Q3
MOSFET N-CH 500V 64A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Q3 Class N-Channel MOSFET, Part Number IXFX64N50Q3. This device features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 64 A at 25°C (Tc). With a maximum Rds On of 85 mOhm at 32 A and 10 V Vgs, it offers efficient switching capabilities. The device's 1000 W (Tc) power dissipation and a Tj operating range of -55°C to 150°C are suitable for demanding applications. Key parameters include a gate charge (Qg) of 145 nC (max) at 10 V and input capacitance (Ciss) of 6950 pF (max) at 25 V. The TO-247-3 Variant package is designed for through-hole mounting. This MOSFET is utilized in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6950 pF @ 25 V |
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