IXFX64N50P
MOSFET N-CH 500V 64A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Polar series N-Channel MOSFET, part number IXFX64N50P. This through-hole power device features a 500V Drain-to-Source Voltage (Vdss) and a continuous drain current rating of 64A (Tc) at 25°C. With a maximum Rds(On) of 85mOhm at 32A and 10V Vgs, it offers efficient switching characteristics. The device boasts a high power dissipation of 830W (Tc) and a maximum junction temperature of 150°C. Key parameters include a gate charge (Qg) of 150nC @ 10V and input capacitance (Ciss) of 8700pF @ 25V. The IXFX64N50P is housed in a PLUS247™-3 package. This component is suitable for applications in power supply units and industrial motor control systems.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8700 pF @ 25 V |
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