IXFX62N25
MOSFET N-CH 250V 62A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX62N25 is a HiPerFET™ N-Channel MOSFET designed for high-efficiency power applications. This through-hole component features a 250V drain-source voltage and a continuous drain current of 62A at 25°C (Tc), with a maximum power dissipation of 390W (Tc). The device exhibits a low on-resistance of 35mOhm at 31A and 10V gate-source voltage. Key parameters include a gate charge of 240 nC at 10V and an input capacitance of 6600 pF at 25V. The PLUS247™-3 package ensures robust thermal performance. This MOSFET is suitable for use in demanding power conversion, industrial motor control, and high-power switching applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
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