IXFX60N55Q2
MOSFET N-CH 550V 60A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX60N55Q2 is a HiPerFET™, Q2 Class N-Channel Power MOSFET designed for high-efficiency power switching applications. This device offers a drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 60A at 25°C (Tc), with a maximum power dissipation of 735W (Tc). Featuring low on-resistance (Rds On) of 88mOhm at 30A and 10V, coupled with a gate charge (Qg) of 200 nC at 10V, this MOSFET optimizes switching performance. Its input capacitance (Ciss) is rated at 6900 pF at 25V. The IXFX60N55Q2 is housed in a through-hole PLUS247™-3 package, suitable for demanding thermal management. This component is commonly utilized in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 735W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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