IXFX55N50F
MOSFET N-CH 500V 55A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX55N50F is a HiPerRF™ series N-Channel Power MOSFET designed for high-voltage, high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 55 A at 25°C (Tc), with a maximum power dissipation of 560 W (Tc). The Rds On (Max) is 85 mOhm at 27.5 A and 10 V (Vgs). Key parameters include a Gate Charge (Qg) of 195 nC (Max) at 10 V and Input Capacitance (Ciss) of 6700 pF (Max) at 25 V. The device is housed in a PLUS247™-3 package for through-hole mounting and operates within an ambient temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power conversion and industrial applications requiring robust performance under demanding conditions.
Additional Information
Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6700 pF @ 25 V |
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