IXFX55N50
MOSFET N-CH 500V 55A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX55N50 is a HiPerFET™ N-Channel power MOSFET designed for high-performance applications. This component features a 500V drain-source voltage rating and a continuous drain current of 55A at 25°C case temperature, with a maximum power dissipation of 625W at 25°C case temperature. The IXFX55N50 offers a low on-resistance of 80mOhm maximum at 500mA and 10V gate-source voltage. It is housed in a PLUS247™-3 package for through-hole mounting. Key electrical characteristics include a gate charge of 330 nC maximum at 10V gate-source voltage and an input capacitance of 9400 pF maximum at 25V drain-source voltage. This device operates across a temperature range of -55°C to 150°C (TJ). Applications span power supplies, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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