IXFX48N60Q3
MOSFET N-CH 600V 48A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX48N60Q3 is an N-Channel HiPerFET™ Q3 Class power MOSFET designed for high-efficiency switching applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 48A at 25°C (Tc), with a maximum power dissipation of 1000W (Tc). The device exhibits a low on-resistance (Rds On) of 140mOhm at 24A and 10V gate-to-source voltage. Key parameters include a gate charge (Qg) of 140nC (Max) at 10V and an input capacitance (Ciss) of 7020pF (Max) at 25V. The IXFX48N60Q3 is housed in a TO-247-3 variant package, identified by Microchip as PLUS247™-3, and is suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in various industrial sectors, including power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7020 pF @ 25 V |
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