IXFX48N50Q
MOSFET N-CH 500V 48A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX48N50Q is a HiPerFET™, Q Class N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 48A at 25°C (Tc). With a maximum Power Dissipation of 500W (Tc), it offers robust thermal management. The Rds(On) is specified at 100mOhm maximum at 24A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 190 nC maximum at 10V and Input Capacitance (Ciss) of 7000 pF maximum at 25V. The device operates over a temperature range of -55°C to 150°C (TJ) and is packaged in a PLUS247™-3 through-hole configuration. This MOSFET is utilized in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 25 V |
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